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G.SKILL To Attend IDF 2013, Showing Next Generation Memory!

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Posted August 29, 2013 by Kevin in RAM

Taipei, Taiwan – 29th August, 2013 – G.SKILL International Co. Ltd., the leading high-performance memory designer and manufacturer, announced to participate this year’s Intel Developer Forum at San Francisco as part of Intel’s memory community at booth no. 165, displaying maximum DDR3 memory frequency & capacity on the new Intel® Core™ i7 processor family for socket LGA-2011 platform, also sharing plans for future technology such as DDR4.

“As this is our first time attending IDF, we are very excited to show our high performance quad channel DDR3 memory and also announce our plans for DDR4,” said Mark Yu – Technical Marketing at G.SKILL.


Established in 1989 by computer hardware enthusiasts, G.SKILL is a leading computer memory & Solid State Drive and flash memory manufacturer based in Taipei, Taiwan. By insisting on continuous product innovation, G.SKILL is always able to being the industry’s first to provide the fastest memory available to the market. Backed by numerous overclocking world records, media editor’s choice awards and customer choice awards. G.SKILL has been recognized as the leader of high performance computer memory by worldwide enthusiasts.

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