Samsung Announces 32GB DDR3 Module
For use in server systems, the new module operates at 1.35-volts, in support of the global trend to cut power usage in mass storage computing environments.
Compared to the 8GB memory modules used in today’s servers, our new module packs an eco-sensitive wallop with four times the density at significantly reduced power levels and no increase in the overall footprint. For data centers, it’s a powerhouse in energy efficiency and performance. said Jim Elliott, vice president, memory marketing, Samsung Semiconductor, Inc.
Based on Samsung’s 50 nanometer (nm)-class 4 Gigabit (Gb) DDR3, the 1.35V DDR3 DRAM improves throughput by 20 percent over a 1.5V DDR3. Its lower power consumption levels are in line with the pressing concern for more energy-efficient “green” systems and components. The development of low-power 4Gb DDR3 will be viewed as critical in reducing data center costs, improving server time management and increasing overall operational efficiency at higher densities.
For the new generation of green servers, the 4Gb DDR3’s high density combined with its lower level of power consumption will not only reduce electricity bills, but also allow for a cutback on installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.
The new 32GB registered dual inline memory module (RDIMM) consists of 72 4Gb DDR3 chip dies produced using Samsung’s 50-nanometer class DRAM production technology. A row of nine quad-die package (QDP) 16Gb DDR3s are mounted on each side of the printed circuit board for a collective 32GB, highly compact configuration.
According to the International Data Corporation (IDC), a market research and analysis firm, the worldwide DDR3 DRAM market will account for 29 percent of the total DRAM market in 2009 and 75 percent in 2011. In addition, IDC estimates that 2Gb-or-higher DDR3 DRAM will make up three percent of the total DRAM market in 2009 and 33 percent in 2011 (units in bits).